The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 23 November 2013.
MIL-PRF-19500/102B
23 August 2013
SUPERSEDING
MIL-S-19500/102A
29 December 1966
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER
TYPES 2N1016B, 2N1016C, AND 2N1016D JAN
Inactive for new design after 7 June 1999.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a high-power, NPN, silicon transistor.
One level of product assurance is provided for each device type.
1.2 Physical dimensions. See figure 1.
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
Types
PT
TC = +45°C
VCBO
VEBO
VCEO
IC
TJ and TSTG
RθJC
(1)
°C/W
°C
W
V dc
V dc
V dc
A dc
150
100
25
100
7.5
2N1016B
0.7
-65 to +150
150
150
25
150
7.5
2N1016C
0.7
2N1016D
150
200
25
200
7.5
0.7
1.4 Primary electrical characteristics. Unless otherwise specified TA = +25°C.
hFE at VCE = 4.0 V dc
VCE(sat)
hFE1
hFE2
hfe
fhfe
IC = 5 A dc
Limits
IC = 5 A dc
IC = 2.0 A dc
IC = 5.0 A dc
IC = 5 A dc
IB = 1 A dc
V dc
kHz
Min
20
10
5
20
Max
80
35
2.5
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ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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