MIL-PRF-19500-157 Semiconductor Device, Diode, Silicon, Temperature Compensated Voltage-Reference, Types 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941Bur-1, 1N943Bur-1, 1N944Bur-1, 1N945Bur-1, And 1N946Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, And HThis specification covers the performance requirements for 11.70 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.