INCH POUND
The documentation and process conversion measures
necessary to comply with this document shall be
MIL-PRF-19500/181J
completed by 16 April 2011.
16 February 2011
SUPERSEDING
MIL-PRF-19500/181H
28 June 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,
TYPES 2N718A, 2N1613, AND 2N1613L, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, low-power transistors.
Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, (similar to TO-18) and figure 2, (similar to TO-39 and TO-5).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
RθJA
Type
PT (1)
PT (2)
VCBO
VCEO
VEBO
IC
VCER
TJ and
RθJC
TC = +25°C
TA = +25°C
RBE = 10 Ω
TSTG
°C/W
°C/W
°C
W
W
V dc
V dc
V dc
mA dc
V dc
2N718A
1.8
0.5
75
30
7
500
50
97
325
-65
2N1613
3.0
0.8
75
30
7
500
50
58
175
to
2N1613L
3.0
0.8
75
30
7
500
50
58
175
+200
(1) Derate linearly at 17.2 mW/°C for type 2N1613 and 2N1613L and at 10.3 mW/°C for type 2N718A for
TC > +25°C.
(2) See figures 3 and 4.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.daps.dla.mil .
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