INCH-POUND
The documentation and process conversion measures
MIL-PRF-19500/225K
necessary to comply with this document shall be
25 January 2011
completed by 25 April 2011.
SUPERSEDING
MIL-PRF-19500/225J
6 July 2007
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
TYPES 2N1711, 2N1711S, 2N1890, AND 2N1890S, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Two
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-5).
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
Type
PT (2)
PT (2)
IC
VCBO
VCER
VCEO
VEBO
TJ and
RθJA
RθJC
(1)
TC = +25°C
TA = +25°C
RBE = 10 Ω
TSTG
(3)
(3)
°C/W
°C/W
°C
W
W
mA dc
V dc
V dc
V dc
V dc
2N1711
3.0
0.8
500
75
50
30
7
-65 to
175
30
2N1890
3.0
0.8
500
100
80
60
7
175
30
+200
(1) Also applies to the corresponding "S" suffix device.
(2) For derating see figures 2 and 3.
(3) For thermal impedance curves see figures 4 and 5.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.daps.dla.mil .
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