INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/295F
shall be completed by 15 May 2012.
15 February 2012
SUPERSEDING
MIL-PRF-19500/295E
1 March 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS,
P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
Inactive for new design for the 2N2608 device after 19 September 2001.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for P-channel, junction, silicon field-effect
transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
1.3 Maximum ratings.
Types
PT (1)
VGSS
TSTG and TJ
TA = +25°C
°C
mW
V dc
2N2608, 2N2608UB
300
30
-65 to +200
(1) Derate linearly, 1.71 mW/°C for TA = +25°C.
1.4 Primary electrical characteristics at TA = +25°C.
YFS
Limit
IDSS
VGS(off)
CISS
IGSS
VDS = -5 V dc
VDS = -5 V dc
VDS = -5 V dc
VDS = 3 V dc
VGS = 15 V dc
ID = -1.0 µA dc
VGS = 0
VGS = 0 V dc
VGS = 0 V dc
VDS = 0 V dc
f = 1 MHz
f = 1 kHz
µmho
mA dc
V dc
pF
nA dc
-1.0
0.75
Minimum
1,000
Maximum
-5.0
6.00
10
7.5
4,500
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ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.daps.dla.mil/.
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