The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 15 June 2013.
MIL-PRF-19500/337L
15 March 2013
SUPERSEDING
MIL-PRF-19500/337K
AMENDMENT 3
3 June 2011
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1,
1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD, 1N4153UBN, 1N4153UBCNA,
1N4153UBCNC, 1N4153UBND, 1N4534, AND 1N4534UB, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for controlled forward voltage switching
diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two
levels of product assurance are provided for each unencapsulated device type.
* 1.2 Physical dimensions. See figure 1 (axial leads), figure 2 (DO-213AA), figure 3 (UB and UBN), figure 4 (die).
* 1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
RθJL
RθJEC
RθJA(PCB)
RθJSP
VBR
VRWM
IO(PCB)
IFSM TSTG
& TJ L = .375 inch (UR) (2)
TA =
tp =
(2) (3) (4)
(UB)
Type
(3) (4)
(9.53 mm)
75°C
8.3ms
(3)
(1) (2)
°C
°C/W
°C/W
°C/W
°C/W
V dc
V (pk)
mA
A (pk)
1N4153-1
100
75
200
2
-65 to
325
250
1N4153UR-1
+175
100
1N4153UB, UBN, UBCA, UBCNA,
-55 to
325
120
UBCC, UBCNC, UBD, UBND
+200
1N4534
-55 to
325
250
1N4534UR
+175
100
1N4534UB, 1N4534UBN
-55 to
325
120
+200
(2) TA = +75°C for both axial and metal electrode leadless face diodes (MELF) (UR) on printed circuit board (PCB),
PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR) = .061 inch (1.55 mm) x
.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4
mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); RθJA with a defined PCB thermal resistance condition
included, is measured at IO = 200 mA dc.
(4) RθJSP refers to thermal resistance from junction to the solder pads of the UB and UBN package.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductor@dla.mil . Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil .
AMSC N/A
FSC 5961
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