The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 14 October 2010.
MIL-PRF-19500/354L
14 July 2010
SUPERSEDING
MIL-PRF-19500/354K
15 December 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER,
TYPES 2N2604, 2N2604UB, 2N2605, AND 2N2605UB,
JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power transistors for
use in low noise level amplifier applications. Four levels of product assurance are provided for each encapsulated
device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.
*
1.2 Physical dimensions. See figure 1 (TO-46), figure 2 (UB), and figures 3, and 4 die.
1.3 Maximum ratings unless otherwise specified, TA = +25°C.
Types
VCBO
VEBO
VCEO
IC
TJ and TSTG
V dc
V dc
V dc
mA dc
°C
2N2604, UB
80
6
60
30
-65 to +200
2N2605, UB
70
6
60
30
-65 to +200
RθJA (2)
PT (1)
PT (1)
RθJC (2)
RθJSP (2)
PT (1)
Type
TSP = +25°C
TC = +25°C
TA = +25°C
°C/W
°C/W
°C/W
mW
mW
mW
2N2604
400
400
N/A
437
175
N/A
2N2604UB
400
N/A
360
275
N/A
100
2N2605
400
400
N/A
437
175
N/A
2N2605UB
400
N/A
360
275
N/A
100
(1) For derating, see figures 5, 6, 7, and 8.
(2) For thermal impedance curves see figures 9, 10, 11, and 12.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
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