The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
MIL-PRF-19500/383B
shall be completed by 6 November 1999
6 August 1999
SUPERSEDING
MIL-S-19500/383A
2 March 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR
TYPES 1N5139A THROUGH 1N5148A
JAN, JANTX AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, voltage-variable-capacitor diode. Three levels of
product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (D0-7).
1.3 Maximum ratings.
Limit
C
Capacitance
Q
PT 1/
VRM (wkg)
VBR
Ratio
f = 50 MHz
VR = 4 V dc
IR = 10 µA dc
VR = 4 V dc
f = 1 MHz
MW
V (pk)
V dc
pF
Minimum
---
---
65
(See table II)
(See table II)
(See table II)
Maximum
400
60
---
(See table II)
---
---
1/ Derate linearly 2.67 mW/°C above 25°C.
OPERATING AMBIENT TEMPERATURE: -65°C TO +175°C.
STORAGE TEMPERATURE: -65°C TO +200°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
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