The documentation and process conversion
measures necessary to comply with this document
INCH-POUND
shall be completed by 13 February 2014.
MIL-PRF-19500/412F
13 December 2013
SUPERSEDING
MIL-PRF-19500/412E
30 April 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N3846, 2N3846T1, 2N3846T3, 2N3847, 2N3847T1, AND 2N3847T3,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Four levels
of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 herein (TO-63), figure 2 (TO-254AA), and figure 3 (TO-257AA).
1.3 Maximum ratings.
Types
PT =
PT =
VEBO
VCBO
VCEO
IC
TSTG and TJ
RθJC
(2)
TA = +25°C
TC = +25°C
(1)
W
W
V dc
V dc
V dc
A dc
°C/W
°C
2N3846
4
150
10
300
200
20
1.0
-65 to +200
2N3846T1
4
150
10
300
200
20
1.0
-65 to +200
2N3846T3
4
(3) 125
10
300
200
20
1.3
-65 to +200
2N3847
4
150
10
400
300
20
1.0
-65 to +200
2N3847T1
4
150
10
400
300
20
1.0
-65 to +200
2N3847T3
4
(3) 125
10
400
300
20
1.3
-65 to +200
(1) For derating, see figures 4 and 5.
(2) For thermal impedance curves, see figures 6 and 7.
(3) For TO-257 devices with typical mounting and small footprint, conservatively rated at 125 W and 1.3°C/W only.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil.
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