INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/415A
shall be completed by 31 January 2004.
31 October 2003
SUPERSEDING
MIL-S-19500/415(USAF)
10 July 1969
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
TYPES 2N2812 AND 2N2814 JAN, JANTX, AND JANTXV
Inactive for new design after 7 June 1999.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors.
Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-61).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
PT (1)
PT (2)
TA = +25°C TC = +100°C
Types
VCBO
VEBO
VCEO
IC
IB
TSTG and TOP
RθJC
°C/W
°C
W
W
V dc
V dc
V dc
A dc
A dc
2N2812
4.0
50
80
8.0
60
10
2.0
2.0
-65 to +200
2N2814
4.0
50
120
8.0
80
10
2.0
2.0
(1) Derate linearly 22.8 mW/°C for TA > +25°C.
(2) Derate linearly 0.5 mW/°C for TC > +100°C.
1.4 Primary electrical characteristics.
|hfe|
VBE(sat)
hFE2
VCE(sat)
COBO
Limit
VCE = 10 V dc
VCB = 10 V dc
VCE = 5.0 V dc
IC = 1.0 A dc
IC = 5.0 A dc
IC = 5.0 A dc
IE = 0
100 kHz ≤ f ≤ 1 MHz IC = 5.0 A dc
f = 10 MHz
IB = 0.5 A dc
IB = 0.5 A dc
V dc
V dc
pF
Min.
40
1.5
Max.
1.2
0.5
350
120
7
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improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
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(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
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