INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/433H
shall be completed by 14 November 2006.
14 August 2006
SUPERSEDING
MIL-PRF-19500/433G
29 July 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER,
TYPES 2N4399 AND 2N5745, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, (TO - 3).
o
1.3 Maximum ratings. TA = +25 C, unless otherwise specified.
RθJA
RθJC
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
PT (2)
PT (1)
Type
TC =
+100°C
°C/W
°C
°C/W
W
V dc
W
V dc
V dc
A dc
A dc
2N4399
5
115
60
60
5
7.5
30
0.875
35
-55 to +200
2N5745
5
115
80
80
5
7.5
20
0.875
35
-55 to +200
(1) Derate linearly 28.57 mW/°C above TA = +25°C.
(2) Derate linearly 1.15 W/°C above TC = +100°C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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