The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
MIL-PRF-19500/509D
completed by 9 January 2009.
9 October 2009
SUPERSEDING
MIL-PRF-19500/509C
25 July 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N6338 AND 2N6341, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, (similar to TO-204AA formally TO-3).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
*
Types
PT (1) (2)
PT (1) (2)
PT
RθJA
RθJC
VCBO
VCEO
VEBO
IC
IB
TSTG
(3)
and
TA =
TC =
TC =
TOP
+25°C
+25°C
+100°C
°C/W
°C
W
W
W
°C/W
V dc
V dc
V dc
A dc
A dc
2N6338
3.5
200
112
50
0.875
120
100
6.0
25
10
-65 to
2N6341
3.5
200
112
50
0.875
180
150
6.0
25
10
+200
(1) Between TC = +25°C and TC = +200°C, linear derating factor (average) = 1.14 W/°C.
(2) Maintain voltage and current according to the safe operating area as shown on figures 2 and 3 and appropriate
mounting conditions.
(3) See figure 4 for thermal impedance graqphs.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
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