The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 12 June 2007.
MIL-PRF-19500/515D
12 March 2007
SUPERSEDING
MIL-PRF-19500/515C
25 July 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,
TYPES 2N6378 AND 2N6379, JAN, JANTX, JANTXV, AND JANHC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, power transistors. Three
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and one
level of product assurance for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (TO-3); figure 2 (JANHC).
* 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
PT
PT
VCEO
VEBO
IB
IC
TJ and TSTG
VCBO
RθJC
Types
TC = +25°C
TC = +100°C
(1)
(1)
°C/W
°C
V dc
W
W
V dc
V dc
A dc
A dc
2N6378
250
143
120
100
6
20
50
0.7
-65 to +200
2N6379
250
143
140
120
6
20
50
0.7
-65 to +200
(1) Between TC = +25°C and TC = +200°C, linear derating factor (average) = 1.43 W/°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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