INCHPOUND
MILPRF19500/523D
The documentation and process conversion
29 December 2012
measures necessary to comply with this revision
SUPERSEDING
shall be completed by 29 March 2013.
MILPRF19500/523C
16 March 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON
TYPES 2N6383, 2N6384, 2N6385, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MILPRF19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power Darlington transistors.
Three levels of product assurance are provided for each device type as specified in MILPRF19500.
1.2 Physical dimensions. The device package style is TO204AA (formerly TO3) in accordance with figure 1.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
PT
VCBO and
VEBO
IB
IC
TJ and TSTG
Types
RθJC
TA = +25°C
TC = +25°C
VCEO
max
(1)
(2)
°C/W
°C
W
W
V dc
V dc
A dc
A dc
2N6383
6.0
100
1.75
40
5.0
0.25
10
55 to +175
2N6384
6.0
100
1.75
60
5.0
0.25
10
55 to +175
2N6385
6.0
100
1.75
80
5.0
0.25
10
55 to +175
(1) Derate linearly 34.2 mW/°C above TA > +25°C.
(2) Derate linearly 571 mW/°C above TC > +25°C.
Comments, suggestions, or questions on this document should be addressed DLA Land and Maritime ATTN:
VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961
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