The documentation and process conversion
INCHPOUND
measures necessary to comply with this revision
MILPRF19500/553F
shall be completed by 25 August 2014.
25 February 2014
SUPERSEDING
MILPRF19500/553E
21 July 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER,
FAST RECOVERY, TYPE 1N6391, JAN, JANTX, JANTXV, JANS, AND JANHC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MILPRF19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery, schottky barrier
diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching
applications. Four levels of product assurance are provided for each encapsulated device type as specified in
MILPRF19500. One level of product assurance is provided for each unencapsulated device type (die) as specified
in MILPRF19500.
1.2 Physical dimensions. The device package styles are as follows: Stud mount case (DO4) in accordance with
figure 1 for device type 1N6391 and unencapsulated JANC die in accordance with figure 2 for device type JANHC.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
IFM (2)
IO (3)
VRRM and
Max
IFSM
TJ and TSTG
VRSM
VR (1)
Type
TC = +125°C
TC = +125°C
VRWM (1)
RθJC
°C
°C/W
V(pk)
V(pk)
V dc
A dc
A dc
A (pk)
1N6391
45
54
45
25
22.5
600
55 to +175
2.0
(1) Full rated VRRM and VRWM is applicable over the range of TC = 55°C to +165°C for IFM = 0. Full rated VR is
applicable over the temperature range of TC = 55 to +155°C. When VR = 45 V dc and TC = +155°C, then
TJ = 175°C.
(2) Average current with a 50 percent duty cycle square wave including reverse amplitude equal to the magnitude of
full rated VRWM. Derate linearly at 0.625 A dc/°C for TC > +125°C.
(3) Full rated VRRM is applicable over the range TC = 55°C to +169°C IO = 0 and TJ = 175°C.
(4) For temperature-current derating curves, see figure 3.
1.4 Primary electrical characteristics. Unless otherwise specified, TC = +25°C.
Max IRM; VRM = 45 V (pk)
Max VFM2
Max CT
Max VFM1
Type
TJ = +25°C
TJ = +175°C
IFM = 50 A (pk)
IFM = 5 A (pk)
VR = 5 V dc
V (pk)
V (pk)
mA (pk)
mA (pk)
pF
1N6391
0.68
0.50
1.5
220
2,000
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961
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