The documentation and process conversion
INCH-POUND
measures necessary to comply with this
MIL-PRF-19500/588A
revision shall be completed by 15 August 1998
15 April 1998
SUPERSEDING
MIL-S-19500/588
4 June 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE,
BIPOLAR, N-CHANNEL, SILICON TYPE 2N7364
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for insulated gate, bipolar power transistors. Four levels of
product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-254AA).
1.3 Maximum ratings. (Unless otherwise specified, TC = +25 C).
PT 1/
VBR(CES)
IC1 2/
PT
IC2
VGE
ICM 3/ 4/
VGE = 0 V
TC = +25 C
TC = +25 C
TC = +25 C
TC = +100 C
Type
IC = 1.0 mA
W
W
V dc
A dc
A (pk)
V dc
A dc
2N7364
150
4
35
20
220
600
20
VISO
R JC
VCE(on) max 3/ 4/
ILM 5/
TJ and TSTG
at 70 K
max
VGE = 15 V
IC = IC2
Type
feet
TJ = +25 C
TJ = +150 C
A
V
V
C/W
C
2N7364
220
600
0.83
3.0
2.89
-55 to +150
Derate linearly 1.2 W/ C for TC > +25 C; P = TJM - TC .
1/
T
RΘJC
2/
Package limited to 35 A dc.
ICM = 4 x IC.
3/
4/
Pulsed (see 4.5.1).
5/
Clamped inductive load current.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
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