* METRIC
The documentation and process conversion measures
necessary to comply shall with this document shall be completed
by 3 March 2011.
MIL-PRF-19500/594B
3 December 2010
SUPERSEDING
MIL-PRF-19500/594A
3 July 1998
*
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND
1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery power rectifier
diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-257AA).
1.3 Maximum ratings (for each leg).
TSTG
IO (1)
trr
IFSM
VR
Types
TC = +100°C
TC = +100°C
and
and
TOP
VRWM
tp = 8.3 ms
V dc
A dc
A dc
ns
+200°C
100
10
50
35
1N6664,
1N6664R
to
-65°C
150
10
50
35
1N6665,
1N6665R
1N6666,
200
10
50
35
1N6666R
(1) Derate linearly, 100 mA/°C from +100°C to +200°C.
Storage temperature: TSTG = -65°C to +200°C.
Operating temperature: TJ = -65°C to +200°C.
Barometric pressure reduced (altitude operation): 8 mm Hg.
RθJC = 2.5°C/W maximum.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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