INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/607B
shall be completed by 6 November 2004.
6 August 2004
SUPERSEDING
MIL-PRF-19500/607A
11 February 1998
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL
AND P-CHANNEL, SILICON, TYPE 2N7337
JAN, JANTX, JANTXV, JANS, AND JANHC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for N-channel, and P-channel, enhancement-
mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). One level of
product assurance is provided for unencapsulated device.
1.2 Physical dimensions. See figure 1 (MO-036AB) (14 pin dip), and figure 2 for JANC die dimensions.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
Min V(BR)DSS
VGS
ID1 (2) (3)
PT (1)
ID2 (2)
IS
TC = +25°C
TC = +25°C
TC = +100°C
VGS = 0 V VGS = 0 V
ID = 1.0 mA ID = -1.0 mA
W
V dc
A dc
A dc
A dc
V dc
N-channel P-channel N-channel P-channel
N-channel P-channel
N-channel P-channel
± 20
2N7337
1.4
1.0
1.0
0.6
0.6
1.0
1.0
100
100
See notes at end of paragraph.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://www.dodssp.daps.mil/.
AMSC N/A
FSC 5961
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