The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 18 June 2014.
MIL-PRF-19500/614J
18 April 2014
SUPERSEDING
MIL-PRF-19500/614H
13 May 2013
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381,
JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-channel, radiation hardened,
enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two
levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy
1.2 Physical dimensions. See figure 1 (TO-257AA).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
Type
PT (1)
PT
Min V(BR)DSS
ID1 (3) (4)
ID2 (3) (4)
TJ and TSTG
RθJC
TA = +25°C
TC =
VGS = 0 V
TC =
TC =
(2)
+25°C
+25°C
+100°C
ID = 1.0 mA dc
(free air)
°C/W
°C
W
W
V dc
A dc
A dc
75
2
100
14.4
9.1
2N7380
1.67
-55 to +150
2N7381
75
2
200
9.4
6.0
1.67
-55 to +150
Type
IS
IDM
VGS
EAS
IAS
max
(5)
A dc
A(pk)
V dc
mJ
A dc
±20
2N7380
14.4
57.6
150
14.4
±20
2N7381
9.4
37.6
150
9.4
(See notes next page)
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
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