The documentation and process conversion measures
INCH-POUND
necessary to comply with this revision shall be completed
by 24 March 2014.
MIL-PRF-19500/621D
24 January 2014
SUPERSEDING
MIL-PRF-19500/621C
11 December 2008
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER,
TYPE 2N7369, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power transistor. Four
levels of product assurance are provided as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-254).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
VCEO
VEBO
IB
IC
TJ and TSTG
PT (1)
RθJC
VCBO
TC = +25°C
(2)
°C
°C/W
W
V dc
V dc
V dc
A dc
A dc
2N7369
115
-80
-80
-7.0
-4.0
-10
-65 to +200
1.5
(1) See figure 2 for temperature-power derating curves.
(2) See figure 3, transient thermal impedance graph.
1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25°C.
|hfe|
hFE2 (1)
VBE(SAT)1 (1)
VCE(SAT)1 (1)
Cobo
Type
VCE = -10 V dc
VCE = -2.0 V dc
IC = -5.0 A dc
IC = -5.0 A dc
VCB = -10 V dc
VC = -0.5 A dc
IC = -3.0 A dc
IB = -0.5 A dc
IB = -0.5 A dc
IE = 0
f = 1 MHz
f = 100 kHz to 1 MHz
V dc
V dc
pF
Min
30
4.0
Max
140
-1.5
-1.0
500
20
(1) Pulsed (see 4.5.1).
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961
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