The documentation process conversion
METRIC
measures necessary to comply with this
revision shall be completed by 6 February 1998
MIL-PRF-19500/625A
6 November 1997
SUPERSEDING
MIL-S-19500/625
15 July 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
TYPES 1N6683, 1N6684, 1N6685, 1N6683US, 1N6684US, AND 1N6685US
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
1. SCOPE
1.1 Scope. This specification covers the performance requirements for switching diodes, suitable for high stress environments where
silver button construction may be inadequate (see 6.3). Four levels of product assurance are provided for each encapsulated device type
and two levels for each unencapsulated device type die as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (D0-204-AH), figure 2 (D-5D), and figure 3.
1.3 Maximum ratings. TA = +25°C.
Types
VBR
Tj and TSTG
RθJX
IFSM
VRWM
IO1
ZθJX
RθJEC
1/ 2/
tp = 1 µs
L=0
L = .375
°C
°C/W
°C/W
°C/W
V(pk)
V(pk)
mA
A(pk)
1N6683, 1N6683US
200
175
200
3.0
-65 to +175
160
50
25
1N6684, 1N6684US
250
200
200
3.0
-65 to +175
160
50
25
1N6685, 1N6685US
350
275
200
3.0
-65 to +175
160
50
25
1/ Derate at 3.0 mA/°C above TL = 75°C at L = 9.53 mm (.375 inch).
2/ Derate at 4.0 mA/°C above TEC = 125°C for US suffix devices.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
FSC 5961
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