The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision shall
MIL-PRF-19500/187B
be completed by 10 May 2005.
10 February 2005
SUPERSEDING
MIL-S-19500/187A(Sig C)
14 September 1962
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE
TYPE JAN1N2361
Inactive for new design after 7 June 1999.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon semiconductor diodes for use in
high-voltage, rectifier circuits, and having the following particular characteristics. One level of product assurance is
provided for each device type as specified in MIL-PRF-19500.
*
1.2 Physical dimensions. See figure 1.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
*
i (surge) (at
TJ and TSTG
Altitude
IO
Vr
VR
IO
TA = +125°C
1/120 sec)
°C
ft
V dc
V dc
mA dc
mA dc
A
2,300
2,000
400
50
10
40,000
-65 to+150
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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