The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
MIL-PRF-19500/228R
shall be completed by 26 July 2013.
26 April 2013
SUPERSEDING
MIL-PRF-19500/228P
26 October 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,
TYPES 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, JAN AND JANTX
These devices are inactive for new design, preferred devices are -
1N5614, 1N5616, 1N5618, 1N5620, 1N5622 on MIL-PRF-19500/427.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1.0 ampere silicon rectifier diodes. Two
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, axial package.
1.3 Maximum ratings. Unless otherwise specified, TA = 25°C.
Types
VRWM
IO
IFSM
Barometric
TSTG and TJ
RθJL
pressure
L = .375 inch
(reduced)
(9.53 mm)
TA = +55°C
At: TA =
At: TA =
+55°C
+150°C
IO = 1 A dc
tp = 8.0 ms
(1) (2)
(1) (2)
°C
°C/W
V(pk)
A dc
mA dc
A(pk)
mmHg
1N3611
200
1
200
30
8
-65 to +175
36
1N3612
400
1
200
30
8
-65 to +175
36
1N3613
600
1
200
30
8
-65 to +175
36
1N3614
800
1
200
30
33
-65 to +175
36
1N3957
1,000
1
200
30
33
-65 to +175
36
(1) From IO rating is independent of heat sinking, special mounting, or leads of the device.
(2) Derate linearly at 8.3 mA between TA = +55°C and TA = +175°C.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.dla.mil.
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