The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 6 March 2013.
MIL-PRF-19500/262G
6 December 2013
SUPERSEDING
MIL-S-19500/262F
19 February 1969
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
TYPES 2N1722 AND 2N1724, JAN AND JANTX
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in
high-speed power-switching applications. Two levels of product assurance are provided for each device type as
specified in MIL-PRF-19500.
1.3 Maximum ratings unless otherwise specified TA = +25°C.
PT (1)
PT (2)
IC
VCBO
VCEO
VEBO
RθJC
Tstg and TJ
TA = +25°C TC = +100°C
°C/W
°C
W
W
V dc
V dc
V dc
A dc
3
50
175
80
10
5
1.5
-65 to +200
(1) Derate linearly at 20 mW/°C for TA ≥ +25°C ≤ +175°C.
(2) Derate linearly at 666 mW/°C for TC > +100°C ≤ +175°C.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business