INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
MIL-PRF-19500/287G
completed by 8 August 2008.
8 May 2008
SUPERSEDING
MIL-PRF-19500/287F
19 July 2002
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, SWITCHING,
TYPE 2N3013, JAN AND JANTX
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon
switching transistors. Two levels of product assurance are provided for each device type as
specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-52).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
*
PT (1)
PT (2)
VCBO
VCEO
IC
IC
TSTG and
Types
RθJA
RθJC
TA = +25°C
TC = +25°C
TOP
°C/W
°C/W
°C
W
V dc
V dc
V dc
mA dc
W
2N3013
0.36
1.2
40
20
5.0
300
476
146
-65 to +200
(1) Derate linearly, 2.10 mW/°C for TA = 25°C.
(2) Derate linearly, 6.86 mW/°C for TC = 25°C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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