The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 24 May 2011.
MIL-PRF-19500/313J
24 February 2011
SUPERSEDING
MIL-PRF-19500/313H
18 January 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
LOW POWER, TYPES 2N2432, 2N2432A, 2N2432UB, 2N2432AUB,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for low power, high speed chopper, NPN
silicon transistors. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (TO-18), figure 2 (JANHC/JANKC die), and figure 3 (AUB and UB
package).
1.3 Maximum ratings, unless otherwise specified, TC =+ 25°C.
TJ and TSTG
VCBO
VCEO
VECO
IC
Type
°C
V dc
V dc
V dc
mA dc
2N2432, 2N2432UB
30
30
15
100
-65 to
2N2432A, 2N2432AUB
45
45
18
100
+200
PT
PT
PT
RθJC
RθJSP
RθJA
Type
TA = +83°C
TSP = +165°C
(2)
(2)
(2)
TC =
+150°C
(1)
(1)
°C/W
°C/W
°C/W
mW
mW
mW
2N2432
360
360
N/A
325
150
N/A
2N2432A
360
360
N/A
325
150
N/A
2N2432UB
N/A
N/A
360
N/A
N/A
95
2N2432AUB
N/A
N/A
360
N/A
N/A
95
(1) For derating, see figures 4 and 5.
(2) For thermal impedance curves, see figures 6, 7, and 8.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information
can change, you may want to verify the currency of this address information using the ASSIST Online database at
AMSC N/A
FSC 5961
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