The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 16 August 2014.
MIL-PRF-19500/347B
16 May 2014
SUPERSEDING
MIL-S-19500/347A
w/AMENDMENT 1
11 January 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPES: 2N3253, 2N3253S, 2N3444, 2N3444S, JAN AND JANTX
Inactive for new design after 7 June 1999.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon power transistors. Two levels
of product assurance are provided for the device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-39, TO-5).
1.3 Maximum ratings.
PT
Type
TA = +25°C TC = +25°C
VCBO
VCEO
VEBO
IC
TSTG and Top
(1)
(2)
°C
W
W
V dc
V dc
V dc
A dc
2N3253,S
1.0
5.0
75
40
5
1
-65 to +200
2N3444,S
1.0
5.0
80
50
5
1
-65 to +200
(1) Derate linearly at 28.6 mW/°C above TA > +25°C.
(2) Derate linearly at 5.71 mW/°C above TC > +25°C.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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