INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
MIL-PRF-19500/358F
completed by 12 October 2013.
12 July 2013
SUPERSEDING
MIL-PR-19500/358E
23 JULY 1999
PERFORMANCE SPECIFICATION SHEET
*
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N3305B THROUGH 1N3350B AND RB, 1N4549B THROUGH 1N4554B AND RB,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 50 watt, silicon, voltage regulator
diodes: B type (standard polarity) and RB type (reverse polarity). Four levels of product assurance are provided
for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-5).
* 1.3 Maximum ratings. Unless otherwise specified TC = 25°C. Maximum ratings are as shown in maximum test
ratings herein (see 3.8), and as follows:
a. Derate PT = 50W at TC ≥ +75°C at 0.5 W/°C above TA ≥ +75°C.
b. -65°C ≤ TJ ≤+175°C; -65°C ≤ TSTG ≤ +175°C.
*
c. Thermal resistance (RθJC) = 2.0°C/W θmaximum.
*
* 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in primary test ratings herein
(see 3.8).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil .
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