The documentation and process conversion
measures necessary to comply with this document
INCH-POUND
shall be completed by 13 February 2014.
MIL-PRF-19500/371H
13 December 2013
SUPERSEDING
MIL-PRF-19500/371G
28 January 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER,
TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND 2N5157T3,
JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3), figure 2 (TO-254AA, T1), and figure 3 (TO-257AA, T3).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
RθJC
PT
PT (1)
VCBO
VCEO
VEBO
IB
IC
TJ and
Type
TC = +25°C
TSTG
(2)
W
W
°C/W
V dc
V dc
V dc
A dc
A dc
°C
2N3902
5.0
125
1.25
700
400
5.0
2.0
3.5
-65 to +200
2N3902T1
6.0
175
1.00
700
400
5.0
2.0
3.5
-65 to +200
2N3902T3
4.0
(3) 125
1.30
700
400
5.0
2.0
3.5
-65 to +200
2N5157
5.0
125
1.25
700
500
6.0
2.0
3.5
-65 to +200
2N5157T1
6.0
175
1.00
700
500
6.0
2.0
3.5
-65 to +200
2N5157T3
4.0
(3) 125
1.30
700
500
6.0
2.0
3.5
-65 to +200
(1) See figures 4, 5, and 6 for temperature-power derating curves.
(2) For thermal impedance curves, see figures 7, 8, and 9.
(3) For TO-257 devices with typical mounting and small footprint, conservatively rated at 125 W and 1.3°C/W only.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
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