`INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/374E
shall be completed by 30 July 2009.
30 April 2009
SUPERSEDING
MIL-PRF-19500/374D
29 June 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N3996 THROUGH 2N3999,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors for use in
high-speed power switching applications. Four levels of product assurance are provided for each device type as
specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die.
* 1.2 Physical dimensions. See figure 1 (types 2N3996 and 2N3997, 4 lead stud package), figure 2 (types 2N3998
and 2N3999, 3 lead stud package), figure 3, figure 4 (JANHC and JANKC, B-version), and figure 5 (JANHC and
JANKC, C-version).
* 1.3 Maximum ratings. Unless otherwise specified, TC = +25C.
RJC
PT (1)
PT (2)
VEBO
VCBO
VCEO
IB
IC
IC (3)
TSTG and TJ
TA = +25C
TC = +100C
C
C/W
W
W
V dc
V dc
V dc
A dc
A dc
A dc
2
30
8
100
80
0.5
5.0
10
-65 to +200
3.33
(1) Derate linearly, 11.4 mW/C for TA +25C.
(2) Derate linearly, 300 mW/C for TC +100C.
(3) This value applies for tp 1 ms, duty cycle 50percent.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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