INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/384H
shall be completed by 15 October 2014.
15 July 2014
SUPERSEDING
MIL-PRF-19500/384G
8 August 2013
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER,
TYPES 2N3584, 2N3585, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three
levels of product assurance are provided for this device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-66).
1.3 Maximum ratings. TC = +25°C, unless otherwise specified.
Type
PT
PT
VCBO
VCEO
VEBO
VCER
IB
IC
TJ and TSTG
RθJC
TA = +25°C TC = +25°C
(1)
°C/W
°C
W
W
V dc
V dc
V dc
V dc
A dc
A dc
2.5
35
375
250
6.0
300
1.0
2.0
2N3584
5.0
-65 to +200
2N3585
2.5
35
500
300
6.0
400
1.0
2.0
5.0
-65 to +200
(1) Derate linearly, 200 mW/°C for TC > +25°C.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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