The documentation and process
INCH-POUND
conversion measures necessary to
MIL-PRF-19500/404C
comply with this revision shall be
30 July 1999
completed by 30 October 1999.
SUPERSEDING
MIL-PRF-19500/404B
15 November 1991
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, MODULE
HIGH VOLTAGE, 1N5597, 1N5600, 1N5603,
JAN, JANTX AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, high voltage, rectifier modules. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1.
1.3 Maximum ratings.
Types
VBR(CEO)
VRWM
IO
IFSM
trr
IR(surge)
TJ and TSTG
IF
TC = 75°C
TC = 75°C
TC = 75°C
µs
°C
kV dc
kV (pk)
A dc
A dc
J
A dc
1N5597
10
10
1.0 1/
30
2
1.0
2
-55 to +150
1N5600
5
5
80
6
2.0
2.0 2/
2
-55 to +150
1N5603
5
5
200
12
5.0
5.0 3/
2
-55 to +150
1/ Derate linearly by 13.3 mA dc/°C from IO = 1.0 A dc at TC = +75°C. Derate to zero at TC = +150°C.
2/ Derate linearly by 26.7 mA dc/°C from IO = 2.0 A dc at TC = +75°C. Derate to zero at TC = +150°C.
3/ Derate linearly by 66.7 mA dc/°C from IO = 5.0 A dc at TC = +75°C. Derate to zero at TC = +150°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
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