The documentation and process conversion
INCH-POUND
measures necessary to comply with this
MIL-PRF-19500/436A
revision shall be completed by
28 June 1999
28 September 1999
SUPERSEDING
MIL-S-19500/436(USAF)
28 August 1970
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR
TYPES 1N5461B THROUGH 1N5476B, AND 1N5461C THROUGH 1N5476C
JAN, JANTX, AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, voltage-variable-capacitor diode. Three levels of
product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to D0-7)
1.3 Ratings and characteristics.
Capacitance
Q
BV
C
PT 1/
vRM(wkg)
IR = 10 µA dc
ratio
VR = 4 V dc
VR = 4 V dc
f = 50 MHz
f = 1 MHz
mW
V(pk)
V dc
pF
Min
---
---
30
(See table II)
(See table II)
(See table II)
Max
400
30
---
(See table II)
---
---
1/ Derate linearly 2.67 mW/°C above 25°C.
OPERATING AMBIENT TEMPERATURE: -65°C TO +175°C
STORAGE TEMPERATURE: -65°C TO +200°C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
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