INCH-POUND
The documentation and process
conversion measures necessary to
MIL-PRF-19500/443B
comply with this revision shall be
2 July 1999
completed by 2 October 1999.
SUPERSEDING
MIL-S-19500/443A
20 October 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
TYPE 1N5719
JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon pin diodes. Three levels of product assurance are
provided for each device type as specified in MIL-PRF-19500 (see 6.3.2).
1.2 Physical dimensions. See figure 1 (see 3.3).
1.3 Maximum ratings.
VRWM
VRWM
PT 1/
TOP and
RθJC
non-repetitive
TSTG
°C
°C/W
V (pk)
mW
V (pk)
100
150
250
-65 to +150
500
1/ Derate 2.0 mA/°C above 25°C
1.4 Primary electrical characteristics at TA = +25°C, unless otherwise indicated.
τCL
V(BR)
CVR
RS
Limits
IR = 10 µA dc
VR = 100 V dc
IF = 100 mA dc
IF = 50 mA dc
100 kHz ≤ f ≤1 MHz
100 MHz
IR = 250 mA dc
Ω
ns
V dc
pF
Minimum
150
100
.30
Maximum
1.25
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
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