INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/446E
shall be completed by 15 March 2009.
15 December 2008
SUPERSEDING
MIL-PRF-19500/446D
13 September 2007
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE,
FULL WAVE BRIDGE RECTIFIER, TYPES SPA25, SPB25, SPC25, AND SPD25,
JANTX AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, single phase, full wave rectifiers.
Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1.
1.3 Maximum ratings.
trr
IF(surge)
VRWM
Bridge (2)
Barometric
Type
Bridge (1)
IO = 25 A dc
IF = 0.5 A
IO2 at
pressure
number
IO1 at
TC = +55C
IR = 1.0 A
TC = +55C
TC = +100C
reduced
Irec = 0.25 A
tp = 8.3 ms
s
V (pk)
A dc
A dc
A (pk)
mm Hg
SPA25
100
25
15
150
8
2.5
SPB25
200
25
15
150
8
2.5
SPC25
400
25
15
150
8
2.5
SPD25
600
25
15
150
8
2.5
(1) Derate from 25 A dc at +55C to 15 A dc at +100C (222 mA dc/C).
(2) Derate from 15 A dc at +100C to 0 A dc at +150C (300 mA dc/C). Operating temperature: -65C to
+150C. Storage ambient temperature: -65C to +150C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductor@dscc.dla.mil . Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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