INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/488E
shall be completed by 9 March 2009.
9 December 2008
SUPERSEDING
MIL-PRF-19500/488D
1 May 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,
TYPES 2N5671 AND 2N5672,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3).
1.3 Maximum ratings. Unless otherwise specified, TC = +25C.
PT (1)
PT (2)
VCBO
VCEO
VEBO
IC
IB
TSTG and TJ
RJC
Types
TA = +25C
TC = +25C
C/W
C
W
W
V dc
V dc
A dc
A dc
V dc
2N5671
6.0
140
120
90
7.0
30
10
1.25
-65 to +200
2N5672
6.0
140
150
120
7.0
30
10
1.25
(1) Derate linearly 34.2 mW/C for TA > +25C.
(2) Derate linearly 800 mW/C for TC > +25C.
1.4 Primary electrical characteristics at TA = +25C.
Pulse
hFE1
VCE(sat)1
Cobo
|hfe|
response
100 kHz < f < 1 MHz
f = 5 MHz
VCE = 2.0 V dc
IC = 15 A dc
VCB = 10 V dc
IC = 2 A dc
Limits
ton
toff
IC = 15 A dc
IB = 1.2 A dc
IE = 0
VCE = 10 V dc
s
s
pF
V dc
10
Min
20
0.75
900
40
Max
100
0.5
1.5
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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