The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
MIL-PRF-19500/503H
completed by 28 June 2014.
28 March 2014
SUPERSEDING
MIL-PRF-19500/503G
18 October 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
ULTRA FAST RECOVERY, TYPES 1N6073 THROUGH 1N6081,
JAN, JANTX, JANTXV, AND JANHC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for three separate series of silicon, ultra fast
recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each
device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated
device type.
1.3 Maximum ratings Unless otherwise specified, TA = +25°C.
Col. 1
Col. 3
Col.4
Col.5
Col. 6
Col. 7
Col.8
Col. 9
Col. 2
VRWM
IO1
IO2
trr (see fig. 3)
TSTG and TJ
IFSM
Types
VR
RθJL
TA = +55°C
TL = +70°C
IF = 0.5 A
tp = 8.3 ms
(4)
IR = -1.0 A
(1) (2) (3)
(1) (4) (5)
IRR = -0.25 A
°C
°C/W
V dc
V (pk)
A dc
A dc
ns
A (pk)
1N6073
50
50
.85
3.0
30
-65 to +155
13.0
35
1N6074
100
100
.85
3.0
30
-65 to +155
13.0
35
1N6075
150
150
.85
3.0
30
-65 to +155
13.0
35
1N6076
50
50
1.3
6.0
30
-65 to +155
8.5
75
1N6077
100
100
1.3
6.0
30
-65 to +155
8.5
75
1N6078
150
150
1.3
6.0
30
-65 to +155
8.5
75
1N6079
50
50
2.0
12.0
30
-65 to +155
5.0
175
1N6080
100
100
2.0
12.0
30
-65 to +155
5.0
175
1N6081
150
150
2.0
12.0
30
-65 to +155
5.0
175
(1) Higher IO rating is allowable provided that TL or TA is maintained such that TJ ≤ 155°C.
(2) IO rating without heat sinking, special mounting or forced air across the device body or leads.
(3) Derate IO rating to zero current linearly, from TA = +55°C to +155°C.
(4) IO and RθJL rating at L = 0 and without forced air across the device body or leads.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
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