The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 11 March 2008.
MIL-PRF-19500/518D
11 December 2007
SUPERSEDING
MIL-PRF-19500/518C(USAF)
12 August 1999
*
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPE 2N3766, 2N3767, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to T0-66).
* 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
VEBO
IB
IC
TJ
PT
VCEO
VCBO
RθJC
Type
and
(1)
TSTG
°C
°C/W
W
V dc
V dc
V dc
A dc
A dc
2N3766
25
80
60
6
2
4
-65 to +200
7
2N3767
25
100
80
6
2
4
-65 to +200
7
(1) Between TC = +25°C and TC = +200°C, linear derating factor (average) = 143 m/W°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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