The documentation and process conversion measures
INCH-POUND
necessary to comply with this revision shall be
MIL-PRF-19500/522A
completed by 30 October 1999.
30 July 1999
SUPERSEDING
MIL-S-19500/522(EL)
21 August 1976
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY
TYPES 2N6603 AND 2N6604
JAN, JANTX, AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, microwave transistors. Three levels of product
assurance are provided for the device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1.
1.3 Maximum ratings.
VCBO
VCEO
VEBO
IC
TJ
TSTG
PT
2/
3/
4/
1/
TA =
TC =
TA =
TC =
+25°C
+125°C
+25°C
+125°C
°C
°C
mW
V dc
mW
V dc
V dc
mA dc
mW
mW
2N6603
300
400
25
15
3.0
30
200
-65 to +200
350
500
2N6604
25
15
3.0
30
200
-65 to +200
1/ Derate at 1.71 mW/°C above TA > +25°C.
2/ Derate at 5.33 mW/°C above TC > +125°C.
3/ Derate at 2.00 mW/°C above TA > +25°C.
4/ Derate at 6.66 mW/°C above TC > +125°C.
1.4 Primary electrical characteristics (common to all types).
NF
hFE
Ccb
Gpe
VCE = 10 V dc
VCE = 10 V dc
VCE = 10 V dc
VCE = 10 V dc
VCB = 10 V dc
VCE = 10 V dc
Type
IC = 30 mA dc
IC = 15 mA dc
IC = 15 mA dc
IC = 30 mA dc
IE = 0 mA dc
IC = 5 mA dc
0.1 MHz ≤ f ≤ 1 MHz
f = 1 GHz
f = 1 GHz
f = 1 GHz
Min
Max
Min
Max
pF
dB
dB
dB
Min
Max
Min
Max
Min
Max
Min
Max
2N6603
30
200
.25
.75
1.0
2.5
15
21
2N6604
30
200
.30
.80
1.5
3.0
15
21
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
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