The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 22 May 2010.
MIL-PRF-19500/527E
22 February 2010
SUPERSEDING
MIL-PRF-19500/527D
w/AMENDMENT 1
8 March 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER,
TYPES 2N6648, 2N6649, AND 2N6650, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, darlington power transistor.
Three levels of product assurance are provided as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-3).
1.3 Maximum ratings unless otherwise specified TA = +25°C.
Types
PT (1)
PT (2)
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
RθJC
TA = +25°C
TC = +25°C
°C
°C/W
W
V dc
V dc
V dc
A dc
A dc
W
2N6648
5.0
-40
-40
-5.0
-0.25
-10
-65 to +175
1.76
85
2N6649
5.0
-60
-60
-5.0
-0.25
-10
-65 to +175
1.76
85
2N6650
5.0
-80
-80
-5.0
-0.25
-10
-65 to +175
1.76
85
(1) Derate linearly 33.3 mW/°C above TA > +25°C.
(2) Derate linearly 567 mW/°C above TC > +25°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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