The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 18 March 2009.
MIL-PRF-19500/528B
18 December 2008
SUPERSEDING
MIL-PRF-19500/528A
23 July 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
SILICON, POWER,
TYPES 2N6032 AND 2N6033,
JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3).
* 1.3 Maximum ratings.
TJ and TSTG
VCEO
VEBO
IB
IC
PT (1)
Types
VCBO
RJC
TC = +25C
C/W
C
W
V dc
V dc
A dc
A dc
V dc
2N6032
140
120
90
7.0
10
50
1.25
-65 to +200
2N6033
140
150
120
7.0
10
40
1.25
-65 to +200
(1) Between TC = +25C and TC = +200C, linear derating factor (average) = 800 mW/C.
1.4 Primary electrical characteristics at TA = +25C.
Cobo
|hfe|
hFE1
.1 MHz f 1 MHz
f = 5 MHz
Types
IC = 40 A dc
IC = 50 A dc
IC = 2.0 A dc
IE = 0 A dc
VCE = 2.0 V dc
VCE = 2.6 V dc
VCE = 10 V dc
VCB = 10 V dc
pF
Min
Max
Min
Max
Min
Max
Min
Max
2N6032
10
50
1,000
10
40
2N6033
10
50
1,000
10
40
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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