The documentation and process conversion
INCH-POUND
measures necessary to comply with this
MIL-PRF-19500/589A
revision shall be completed by 15 August 1998
15 April 1998
SUPERSEDING
MIL-S-19500/589
24 June 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR
N-CHANNEL, SILICON TYPES 2N7367 AND 2N7368, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an insulated gate bipolar power transistor. Four levels of
product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-258) for 2N7367 and figure 2 (TO-259) for 2N7368.
1.3 Maximum ratings. At TC = 25 C, unless otherwise specified. 1/ 2/
PT
VGE
IC2
IC0M 5/
PT 3/
IC1 4/
VBR(CES)
VF
Type
TC = +25 C
TC = +25 C
TC = +25 C
TC = +100 C
IF = IC2
VGE = 0 V
IC = 1.0 mA
W
W
V dc
A dc
A (pk)
V dc
V
A dc
2N7367
200
4
45
27
220
600
1.7
20
ILM
V(ISO)
R JC1
VCE(on) max
TJ and TSTG
TRR
R JC2
at 70 K
max
max
Type
6/
feet
for
for diode
VGE = 15 V
IC = IC2
If = IC2
IGBT
TJ = +25 C
TJ = +150 C
A
V
V
ns
C/W
C
C/W
2N7367
220
600
0.64
3.0
2.89
-55 to +150
100
1.2
1/ Pulsed (see 4.5.1).
2/ Electrical and thermal ratings are identical for both 2N7367 and 2N7368.
TJM - TC .
3/ Derate linearly 1.56 W/ C for TC > +25 C;
PT =
RΘJC
4/ Package limited to 45 A dc.
5/ ICM = 4 x IC.
6/ Clamped inductive load current.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
FSC 5961
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