The documentation and process conversion
measures necessary to comply with this revision
INCH-POUND
shall be completed by 1 June 2014.
MIL-PRF-19500/615G
1 April 2014
SUPERSEDING
MIL-PRF-19500/615F
10 July 2013
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383,
JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, radiation hardened,
enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two
levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy
ratings (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
1.2 Physical dimensions. See figure 1 (TO-257AA).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
Type
ID1 (3) (4)
ID2 (3) (4)
TJ and TSTG
RθJC
PT (1)
PT
Min V(BR)DSS
TC = +100°C
TA = +25°C
(2)
VGS = 0 V
(free air)
ID =-1.0 mA dc
°C/W
°C
W
W
V dc
A dc
A dc
2N7382
75
2
1.67
-100
-11.0
-7.0
-55 to +150
2N7383
75
2
1.67
-200
-6.5
-4.1
-55 to +150
Type
IS
IDM
EAS
IAS
VGS
(5)
A dc
A (pk)
mJ
A dc
V dc
±20
2N7382
-11.0
-44
150
-11.0
±20
2N7383
-6.5
-26
165
-6.5
See notes on next page.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
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