The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
MIL-PRF-19500/617D
shall be completed by 17 July 2009.
17 April 2009
SUPERSEDING
MIL-PRF-19500/617C
3 August 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL,
COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674
AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power
rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-254AA isolated).
1.3 Maximum ratings. (for each leg).
IFSM (1)
IF
trr
RJC
RJA
TSTG and TJ
Types
VRWM
TC = 100C
ID = 0.2 mA
tP = 8.3 ms
(1)
(1)
(1)
dc
(1) (2) (3)
C/W
C/W
C
A dc
ns
A (pk)
V dc
300
1N6672, 1N6672R
400
150
15
35
2.0
40
-65 to +200
1N6673, 1N6673R
500
1N6674, 1N6674R
(1) Each individual diode.
(2) Derate linearly at 150 mA/C from +100C to +150C.
(3) Total package current is limited to 30 A dc.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil.
AMSC N/A
FSC 5961
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