The documentation and process conversion measures
necessary to comply with this document shall be
INCH-POUND
completed by 18 February 2014.
MIL-PRF-19500/622D
18 December 2013
SUPERSEDING
MIL-PRF-19500/622C
25 October 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor. Four
levels of product assurance are provided as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO - 254).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
PT (1)
VCEO
VEBO
IB
IC
TJ and TSTG
VCBO
RθJC
Type
TC = +25°C
(2)
°C
°C/W
W
V dc
V dc
V dc
A dc
A dc
2N7368
115
80
80
7.0
-65 to +200
1.5
4.0
10
(1) See figure 2 for temperature-power derating curve.
(2) See figure 3, transient thermal impedance graph.
1.4 Primary electrical characteristics.
hFE2 (1)
VBE(SAT)1 (1)
VCE(SAT)1 (1)
Cobo
|hfe|
Limit
IC = 5.0 A dc
IC = 5.0 A dc
VCB = 10 V dc
VCE = 10 V dc
VCE = 2.0 V dc
IC = 0.5 A dc
IC = 3.0 A dc
IB = 0.5 A dc
IB = 0.5 A dc
IE = 0
f = 1 MHz
f = 100 kHz to 1 MHz
V dc
V dc
pF
Min
30
4.0
Max
140
1.5
1.0
500
20
(1) Pulsed (see 4.5.1).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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