INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/623D
shall be completed by 25 June 2014.
25 March 2014
SUPERSEDING
MIL-PRF-19500/623C
17 May 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, HIGH-POWER
TYPE 2N7371 JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power Darlington
transistor. Four levels of product assurance are provided as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO - 254AA).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
*
Type
PT (1)
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
RθJC
TC = +25°C
(2)
°C
°C/W
W
V dc
V dc
V dc
A dc
A dc
2N7371
100
-100
-100
-5.0
-0.2
-12
-65 to +200
1.5
(1) See figure 2 for temperature-power derating curves.
(2) See figure 3, transient thermal impedance graph.
1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25°C.
*
hFE1 (1)
VBE(SAT) (1)
VCE(SAT) (1)
|hfe|
Limit
VCE = -3.0 V dc
IC = -12.0 A dc
IC = -12.0 A dc
VCE = -3.0 V dc
IC = -6.0 A dc
IB = -120 mA dc
IB = -120 mA dc
IC = -5.0 A dc
f = 1 MHz
V dc
V dc
Min
1,000
10
Max
18,000
-4.0
-3.0
250
(1) Pulsed see 4.5.1.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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