The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision shall
be completed by 8 December 2004.
MIL-PRF-19500/629C
8 September 2004
SUPERSEDING
MIL-PRF-19500/629B
5 December 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER,
SCHOTTKY BARRIER, TYPES 1N6702 AND 1N6702US,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier rectifier diodes.
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500,
and two levels of product assurance for each unencapsulated die (element evaluation).
1.2 Physical dimensions. See figures 1 (similar to DO-41), 2 (D-5C), and 3 (JANHC and JANKC die) dimensions.
* 1.3 Maximum ratings.
VRWM (1)
IO1 (2) (3)
IFSM
TJ (4)
Types
TSTG
°C
°C
V (pk)
A dc
A (pk)
1N6702
40
5.0
150
-65 to +150
-65 to +125
1N6702US
(1) Derate linearly at 1.2 V/ °C above TL or TEC = +90 °C where TL is at L = .375 inch (9.52 mm).
(2) Derate linearly at 71 mA/ °C above TL or TEC = +55 °C where TL is at L = .375 inch (9.52 mm).
(3) For derating, see figures 4 and 5.
(4) The maximum TJ depends on the voltage applied. See figures 4 and 5.
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TA = +25 °C.
Types
Max
Max
Max
Max IRM
Max
Max RθJL or RθJEC
VRM = 40 V dc
VFM1
VFM2
VFM3
ZθJX
pulsed method (see 4.5.1)
TJ = +25 °C
TJ = +100 °C
IFM = 3.0 A
IFM = 5.0 A
IFM = 15.7 A
.375 inch (9.52 mm)
lead length or end cap
IRM1
IRM2
°C/W
°C/W
(pk)
V (pk)
V (pk)
mA
MA
2.5
20
25.0
0.20
0.60
0.47
0.44
1N6702
2.5
10
25.0
0.20
0.60
0.47
0.44
1N6702US
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
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