MIL-PRF-19500-391 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N3019, 2N3019S, 2N3057A, 2N3700, And 2N3700Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb Jankcbm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assurance \(RHA\) to three radiation levels is provided for JANTXV JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/391N

4.3 Screening (JANTX, JANTXV, and JANS only). Screening shall be in accordance with table E-IV of

MIL�PRF�19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

Measurement

table E-IV of

JANS

JANTX and JANTXV levels

(1) 3c

Thermal impedance method 3131 of

MIL�STD�750. See 4.3.2.

Not applicable.

ICES1 and hFE1.

48 hours minimum.

ICES1; hFE1; ĆICES1 = 100 percent of

ICES1 and hFE1.

initial value or 5 nA dc, whichever is

greater; ĆhFE1 = �15 percent.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICES1 = 100 percent of initial value or 5

ĆICES1 = 100 percent of initial value or

nA dc, whichever is greater;

5 nA dc, whichever is greater;

ĆhFE1 = �15 percent.

(1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV levels do not need to be

repeated in screening requirements.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as

defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias

conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification

demonstrating equivalence is required. In addition, the manufacturing site's burn-in data and performance history will

be essential criteria for burn-in modification approval. Use method 3100 of MIL�STD�750 to measure TJ.

4.3.2 Thermal impedance measurements. The thermal impedance measurements shall be performed in

accordance with method 3131 of MIL�STD�750 using the guidelines in that method for determining IM, IH, tH, tMD (and

VC where appropriate). Measurement delay time (tMD) = 70 �s max. See table III, group E, subgroup 4 herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL�PRF�19500, and as

specified herein. If alternate screening is being performed in accordance with MIL�PRF�19500, a sample of

screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb,

group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL�PRF�19500, and

table I herein.