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MIL-PRF-19500-391 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N3019, 2N3019S, 2N3057A, 2N3700, And 2N3700Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb Jankcbm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assurance \(RHA\) to three radiation levels is provided for JANTXV JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/391N
1.3 Maximum ratings. Unless otherwise specified, TA = +25�C. - Continued.
Types
PT
PT
PT
RθJA
RθJC
RθJSP(IS)
TSP(IS) = +25�C
TA = +25�C
TC = +25�C
(2) (3) (4)
(2) (3)
(2) (3)
(1) (2)
(1) (2)
(1) (2)
�C/W
�C/W
�C/W
W
W
W
2N3019
0.800
5
N/A
195
30
N/A
2N3019S
0.800
5
N/A
195
30
N/A
2N3057A
0.500
1.8
N/A
325
80
N/A
2N3700
0.500
1
N/A
325
150
N/A
2N3700UB
0.500
N/A
1.5
325
N/A
90
(1)
For derating, see figures 7, 8, 9, 10, 11, and 12.
(2)
See 3.3.
(3)
For thermal curves, see figures 13, 14, 15, 16, 17, 18, and 19.
(4)
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 7 and
11 for the UB package and use RθJA.
1.4 Primary electrical characteristics.
Limits
hFE4 (1)
hFE1
hFE2
hFE3 (1)
VCE = 10 V dc
VCE = 10 V dc
VCE = 10 V dc
VCE = 10 V dc
IC = 150 mA dc
IC = 0.1 mA dc
IC = 10 mA dc
IC = 500 mA dc
Min
100
50
90
50
Max
300
300
300
Types
Limit
Cobo
|hfe|
hFE5 (1)
100 kHz ≤ f ≤ 1 MHz
f = 20 MHz
VCE = 10 V dc
VCB = 10 V dc
VCE = 10 V dc
IC = 1 A dc
IE = 0
IC = 50 mA dc
2N3019, 2N3019S
pF
2N3057A, 2N3700
2N3700UB
Min
15
5
Max
20
12
Types
Limits
VCE(sat)1 (1)
VCE(sat)2 (1)
VBE(sat) (1)
IC = 150 mA dc
IC = 500 mA dc
IC = 150 mA dc
IB = 15 mA dc
IB = 50 mA dc
IB = 15 mA dc
2N3019, 2N3019S
V dc
V dc
V dc
2N3057A, 2N3700
2N3700UB
Min
Max
0.2
0.5
1.1
(1) Pulsed, see 4.5.1.
2



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