INCH-POUND
The documentation and process conversion
MIL-PRF-19500/193F
measures necessary to comply with this revision
2 November 2009
shall be completed by 2 February 2010.
SUPERSEDING
MIL-PRF-19500/193E
12 May 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER
TYPES 1N457, 1N458, AND 1N459, JAN
Inactive for new design.
This specification is approved for use by all Departments and Agencies
of the Department of Defense.
The requirements for acquiring the product described herein shall consist
of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon diode rectifiers. One level of
product assurance is provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-7, 35).
1.3 Maximum ratings. TA = +25°C, unless otherwise indicated.
VRM
VRWM
IO
TJ
TSTG
IF
Type (1)
= +25°C(1)
TA
°C
°C
mA
V (pk)
V (pk)
mA dc
70
60
150
225
1N457
-65 to +150
-65 to +175
150
125
150
165
1N458
1N459
200
175
150
120
(1) Derate IO linearly to 0.0 mA dc at +150°C.
1.4 Primary electrical characteristics: T = +25°C, unless otherwise indicated.
A
VF1
IR1 at VRWM
IR2 at VRWM
Type
TA = +150°C
µA dc
V dc
nA dc
1N457
1.0
25
5
1N458
1.0
25
5
1N459
1.0
25
5
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil.
AMSC N/A
FSC 5961
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